Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles,formulation and implementation of the model |
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| Affiliation: | 1. STR Japan K.K., East Tower 15F, Yokohama Business Park, 134, Goudo-cho, Hodogaya-ku, Yokohama, Kanagawa 240-0005, Japan;2. Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197, Japan;3. Semiconductor Technology Research d.o.o. Beograd (STR Belgrade), Belgrade, Serbia;1. Institut für NE-Metallurgie und Reinststoffe (INEMET), Technische Universität Bergakademie Freiberg, Germany;2. Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany;3. Professur für Mess- und Sensorsystemtechnik (MST), Technische Universität Dresden, Germany;1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;2. School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;3. University of Chinese Academy of Sciences, Beijing 100049, China;4. Zing Semiconductor Corporation, Shanghai 201306, China;1. Department of Mechanical Engineering, National Central University, Jhongli 320, Taiwan, ROC;2. Chung Shan Institute of Science and Technology (CSIST), Taiwan, ROC;3. Sino-American Silicon Products Inc., Taiwan, ROC |
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| Abstract: | A novel model for three-dimensional (3D) global simulation of heat transfer in a Czochralski (CZ) furnace for silicon crystal growth was proposed. Convective, conductive and radiative heat transfers in the furnace are solved together in a conjugated way by a finite control-volume method. A mixed 2D/3D space discretization technique was developed, and concepts of 2D domain and 3D domain for a CZ furnace were proposed. This technique enables 3D global simulations to be conducted with moderate requirements of computer memory and computation time. A 2D global simulation was carried out to obtain good initial conditions for 3D global modeling to speed up the global iteration. The model was demonstrated to be valid and reasonable. |
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