Dielectric properties of lead zirconate titanate thin films seeded with barium strontium titanate nanoparticles |
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| Affiliation: | 1. Department of Chemical Engineering, Graduate School of Engineering, Tohoku University, 07 Aoba, Aramaki-aza, Aoba, Sendai 980-8579, Japan;2. Process Development Department, Renesas Technology Corp., Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan;3. Hitachi Research Laboratory, Hitachi, Ltd., Omika, Hitachi, Ibaraki 319-1292, Japan;1. Radiation and Space Materials Laboratory, Tomsk State University of Control Systems and Radio-electronics, Tomsk, Tomsk Region 634050, Russia;2. Space Materials Laboratory, Amur State University, Blagoveshchensk, Amur Region 675027, Russia;1. Electroceramics Research Laboratory, GVM Girls College, Sonipat, 131001, India;2. Department of Physics, DIT University, Dehradun, 248009, India;3. Department of Physics, GVM Girls College, Sonipat, 131001, India;4. Department of Physics, Hindu College, Sonipat, 131001, India;5. Solid State Physics Laboratory, Lucknow Road, Delhi, 110054, India;1. Key Laboratory of Functional Materials and Devices for Special Environments of CAS; Xinjiang Key Laboratory of Electronic Information Materials and Devices; Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, PR China;2. University of Chinese Academy of Sciences, Beijing 100049, PR China;1. Department of Physics, Zhejiang Normal University, Jinhua 321004, China;2. College of Geography and Environmental Sciences, Zhejiang Normal University, Jinhua 321004, China |
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| Abstract: | A low temperature synthetic method recently proposed by the authors was applied to the fabrication of lead zirconate titanate (PZT) thin films containing crystalline seeds of barium strontium titanate (BST) nanoparticles. PZT precursor and the BST particles were prepared with complex alkoxide methods. Precursor solution suspending the BST particles was spin-coated on Pt/Ti/SiO2/Si substrate to film thickness of 500–800 nm at particle concentrations of 0–25.1 mol%, and annealed at various temperatures. Seeding of BST particles prevented the formation of pyrochlore phases, which appeared at temperatures above 400 °C in unseeded PZT films, and induced crystallization of PZT into perovskite structures at 420 °C, which was more than 100 °C below the crystallization temperature of the unseeded PZT films. Measurement of dielectric properties at 1 kHz showed that the 25.1 mol% BST-seeded PZT films annealed at 450 °C had a dielectric constant as high as 300 with a dissipation factor of 0.05. Leakage current density of the film was less than 1×10?6 A/cm2 at applied electric field from 0 to 64 kV/cm. |
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