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Dielectric and piezoelectric studies of Fe doped PLZT ceramics
Affiliation:1. Electronic Materials Division, National Physical Laboratory, New Delhi-110012, India;2. Department of Physics, Indian Institute of Technology, New Delhi 110016, India;3. Department of Physics, Indian Institute of Technology, Kharagpur 721302, India;1. College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, China;2. College of Materials Science and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China;3. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China;1. University of Silesia, Institute of Technology and Mechatronics, 12 Zytnia Str., Sosnowiec, 41-200 Poland;2. University of Silesia, Institute of Chemistry, 9 Szkolna Str., Katowice, 40-007 Poland
Abstract:Polycrystalline samples of Pb0.9(La1  zFez)0.1(Zr0.65Ti0.35)0.975O3 [referred as PLFZT] (where z = 0.0, 0.3, 0.5 and 0.7) have been synthesized by a high-temperature solid-state reaction technique. X-ray diffraction analysis suggests the formation of single-phase compounds with tetragonal structure. The dielectric studies of the compounds as a function of temperature (from room temperature (RT) to 600 K) at a frequency 10 kHz show that the compounds undergo a phase transition of diffuse type. Diffusivity studies of the phase transition of these compounds provided its value between 1 and 2, indicating the variation of degree of disordering in the system. Measurement of dc resistivity (ρdc) as a function of temperature (RT to 600 K) at a constant biasing field dc 10 V/cm suggests that the compounds exhibit negative temperature coefficient of resistance (NTCR). The piezoelectric parameters as planar coupling coefficient, frequency constant and mechanical quality factor have been presented.
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