Nd:YAG pulsed laser deposition of AlVO4 thin films on alumina and monocrystalline MgO |
| |
| Affiliation: | 1. Holon Institute of Technology, Holon 5810201, Israel;2. Fraunhofer Institute for Mechanics of Materials IWM, Woehlerstr. 11, 79108 Freiburg, Germany;1. Department of Systems Biology, Center for Genetic Engineering and Biotechnology, Cuba;2. Pharmaceuticals Department, Center for Genetic Engineering and Biotechnology, Cuba;3. Department of Preclinical Studies, National Institute of Oncology and Radiobiology of Cuba, Cuba;4. European Molecular Biology Laboratory, European Bioinformatics Institute (EMBL-EBI), Wellcome Trust Genome Campus, Hinxton, Cambridge, UK;5. Cell Biology Unit, Institut Pasteur of Montevideo, Uruguay;1. Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83, Sweden;2. Sandvik Coromant AB, Stockholm SE-12680, Sweden;3. Applied Nuclear Physics, Department of Physics and Astronomy, Uppsala University, Uppsala SE-75120, Sweden;4. SECO Tools AB, SE-737 82 Fagersta, Sweden;5. Theoretical physics, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83, Sweden |
| |
| Abstract: | AlVO4 thin films were prepared by infrared Nd:YAG pulsed laser deposition on two different substrates (polycrystalline Al2O3 and monocrystalline MgO). The distance between the target-substrate (30 mm) and the partial oxygen pressure (0.14 mbar) during the deposition process were chosen taking into account the previous experiences with other oxides. The substrate temperature was varied between 300 and 600 °C finding an optimum at about 400 °C. At higher temperatures, the vanadium seems to evaporate from substrate surface with a strong change of stoichiometry. Preferential growth of AlVO4 films in the direction (022), were grown on MgO substrates. A very high sensitivity of these films to a flux of NO2 gas is also shown. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
