Ferroelectric properties of Ba0.6Sr0.4TiO3 thin films with different grain sizes |
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| Affiliation: | 1. School of Electronic Science and Engineering, Nanjing University of Posts & Telecommunications, Nanjing 210023, PR China;2. National Lab of Solid State Microstructures, Department of Physics, Nanjing University, Nanijng 210093, PR China;3. School of Physics and Electronic Electrical Engineering, Huaiyin Normal University, Huaian 223300, PR China;4. Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong;1. Department of Mechanics, School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, People’s Republic of China;2. Department of Mechanical and Aerospace Engineering, Rutgers University, New Brunswick, NJ 08903, USA;1. Peter Grünberg Institute and Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Center Jülich, D-52425 Jülich, Germany;2. International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China;3. Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany;4. Department of Physics, University of Warwick, Coventry CV4 7AL, UK;5. Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic;6. Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA |
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| Abstract: | Barium strontium titanate (BST) thin films were prepared by RF magnetron sputtering. The curves of dielectric constant–voltage, dissipation factor–voltage and the hysteresis loops of BST thin films with different grain sizes were investigated. The differences of the curves were analyzed. The voltage shift and an increase in the maximum dielectric constant were observed in ɛ–V curves as the grain size in the films increased. It is found that the dielectric loss of BST thin films does not change significantly with applied voltage. The origin of the asymmetric hysteresis due to asymmetrical potential barriers at the upper and bottom interfaces, residual elastic stress and incomplete compensation of depolarizing field was discussed. |
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