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Atom Probe Tomography and field evaporation of insulators and semiconductors: Theoretical issues
Affiliation:1. Groupe de Physique des Matériaux, UMR CNRS 6634, Normandie Université, Université – INSA de Rouen, Avenue de l’Université BP12, 76801 Saint-Etienne-du-Rouvray, France;2. Department of Physics and Atmospheric Science, Dalhousie University, Halifax, NS B3H 3J5, Canada;1. Oak Ridge National Laboratory;2. Cameca Instruments, Inc.;1. Australian Centre for Microscopy & Microanalysis, The University of Sydney, NSW 2006, Australia;2. School of Aerospace, Mechanical & Mechatronic Engineering, The University of Sydney, NSW 2006, Australia;3. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA;4. Max-Planck-Institut für Eisenforschung, Max-Planck-Str. 1, 40237 Düsseldorf, Germany;5. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom;1. CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, WI 53711, USA;2. Department of Materials, University of Oxford, Parks Road, Oxford OX13PH, UK;3. SIMaP, Grenoble INP-UJF-CNRS, BP 75, 38402, Saint-Martin-d’Heres Cedex, France;4. Groupe de Physique des Materiaux, UMR CNRS 6634, Université de Rouen, Saint Etienne du Rouvray 76801, France;1. School for Aerospace, Mechanical and Mechatronic Engineering/Australian Centre for Microscopy and Microanalysis, The University of Sydney, NSW 2006, Australia;2. School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA;3. Center for Nanoscale Systems, Harvard University, Cambridge, MA 02138, USA;4. Materials Department, The University of Oxford, Oxford, UK;5. Chemical Physics of Materials (Catalysis-Tribology), Université Libre de Bruxelles, Campus Plaine, CP 243, 1050 Brussels, Belgium;1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA;2. Idaho National Laboratory, Idaho Falls, ID 83415, USA;1. Max-Planck-Institut für Eisenforschung, Max-Plack Straße 1, Düsseldorf, Germany;2. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
Abstract:After reviewing the physics and chemistry in high electrostatic fields and summarizing the theoretical results for Atom Probe Tomography of metallic tips, we turn to the new challenges associated with insulators and semiconductors with regard to local fields inside and on the surface of such materials. The recent (theoretical) discovery that in high fields the band gap in these materials is drastically reduced to the point where at the evaporation field strength it vanishes will be crucial in our discussion.
Keywords:Laser-assisted Atom Probe Tomography  Semiconductors  Insulators  Field evaporation
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