首页 | 本学科首页   官方微博 | 高级检索  
     


Electron holographic tomography
Affiliation:1. University fo Cambridge;1. School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia;2. Institute of Engineering Innovation, School of Engineering, University of Tokyo, Tokyo 113-8656, Japan;3. Monash Centre for Electron Microscopy, Monash University, Clayton, Victoria 3800, Australia;4. Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia;1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, United States;2. Center for Nanoscale Materials, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439, United States;3. International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan;1. Triebenberg Labor, Institut für Strukturphysik, Technische Universität Dresden, D-01062 Dresden, Germany;2. Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin, Germany
Abstract:The exact knowledge about intrinsic electrostatic potentials and in particular their three-dimensional distribution at the nanometer scale is a key prerequisite for understanding the solid state properties. Electron holographic tomography (EHT), the combination of off-axis holography with tomography in the transmission electron microscope, provides a unique access to this information. We review the development and application of automated EHT to reconstruct 3D potentials in nanostructures such as the mean inner potential of a material or the diffusion potential across p–n junctions in semiconductors. We also discuss future challenges of the 3D reconstruction of electric crystal potentials at atomic resolution and magnetostatic fields as well as ways to overcome present limitations of the method.
Keywords:Nanostructure  Hologram  Tomogram  Phase image  Electrostatic potential  Magnetostatic field  3D morphology  p–n Junction  Semiconductor
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号