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压接式SiC MOSFET模块
引用本文:朱楠,陈敏,徐德鸿. 压接式SiC MOSFET模块[J]. 电源学报, 2020, 18(6): 179-191
作者姓名:朱楠  陈敏  徐德鸿
作者单位:浙江大学电气工程学院,浙江大学电气工程学院,浙江大学电气工程学院
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目)
摘    要:本文介绍了一种适用于SiC MOSFET的压接式封装方法。针对SiC MOSFET芯片面积较小的特点,使用弹性压针实现SiC MOSFET芯片上表面的压力接触。由于散热器同时也是电流通路,为减小由散热器引入的寄生电感,采用了一种厚度较薄且具有良好散热性能的微通道散热器。本文介绍了研制的压接式SiC MOSFET样品。通过仿真和实验评估了样品的电、热特性,验证了所提出封装方案的可行性。

关 键 词:功率器件封装;压接式器件;SiC MOSFET;杂散电感;热管理
收稿时间:2018-02-22
修稿时间:2018-09-03

Press-pack SiC MOSFET Module
ZHU Nan,CHEN Min and XU Dehong. Press-pack SiC MOSFET Module[J]. Journal of Power Supply, 2020, 18(6): 179-191
Authors:ZHU Nan  CHEN Min  XU Dehong
Affiliation:College of Electrical Engineering, Zhejiang University,College of Electrical Engineering, Zhejiang University,College of Electrical Engineering, Zhejiang University
Abstract:This paper proposes a feasible press-pack packaging method for SiC MOSFETs. To adapt the small die size of SiC MOSFET, flexible press pins are used to realize die top side pressure contact. Since the heatsink is included in the current carrying path, to reduce the parasitic inductance introduced by the heatsink, a micro-channel heatsink is used which is thinner while remaining adequate heat dissipation efficiency. The manu-factured sample of press-pack SiC MOSFET is introduced in this paper. The thermal and electrical performances of the press-pack are evaluated by simulations and tests to verify the feasibility of the proposed packaging approach.
Keywords:power semiconductor packaging   press-pack   SiC MOSFET   stray inductance   thermal management
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