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InSb红外探测器组件的无输出问题研究
引用本文:李忠贺,吕梁晴,李海燕,牟宏山,赵建忠,李春领. InSb红外探测器组件的无输出问题研究[J]. 红外, 2020, 41(11): 11-16. DOI: 1O.3969/j.issn.1672-8785.2020.11.002
作者姓名:李忠贺  吕梁晴  李海燕  牟宏山  赵建忠  李春领
作者单位:华北光电技术研究所,北京100015;华北光电技术研究所,北京100015;华北光电技术研究所,北京100015;华北光电技术研究所,北京100015;华北光电技术研究所,北京100015;华北光电技术研究所,北京100015
摘    要:研究了InSb红外探测器组件的无输出问题。通过故障分析确定探测器的失效部件为InSb芯片。结合器件结构和工艺,对InSb器件的失效机理进行了研究。发现器件在去胶工艺中有光刻胶残留,在后续的钝化工艺中会生成难以腐蚀去除的沾污层,导致电极膜层存在可靠性隐患。经历高温、振动等环境试验后电极浮起,导致了探测器组件的无输出问题。

关 键 词:InSb  红外探测器  失效分析
收稿时间:2020-08-10
修稿时间:2020-08-17

Research on No Output Problem of InSb Infrared Detector Assembly
LI Zhong-he,LV Liang-qing,LI Hai-yan,MU Hong-shan,HAO Jian-zhong and LI Chun-ling. Research on No Output Problem of InSb Infrared Detector Assembly[J]. Infrared, 2020, 41(11): 11-16. DOI: 1O.3969/j.issn.1672-8785.2020.11.002
Authors:LI Zhong-he  LV Liang-qing  LI Hai-yan  MU Hong-shan  HAO Jian-zhong  LI Chun-ling
Affiliation:North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics
Abstract:The problem of no output of InSb infrared detector module is studied. Through failure analysis, it is determined that the failure component of the detector is the InSb chip. Combined with the device structure and process, the failure mechanism of InSb device is studied. It is found that there is photoresist residue in the device during the degumming process, and a contaminant layer that is difficult to be etched and removed will be generated in the subsequent passivation process, resulting in hidden reliability problems in the electrode film. The electrode floates after environmental tests such as high temperature and vibration, which will cause the problem of no output of the detector assembly.
Keywords:InSb  infrared detector  failure analysis
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