| 4 in硅基碲化镉的厚度均匀性研究 |
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| 引用本文： | 李震,高达,师景霞,王丛.4 in硅基碲化镉的厚度均匀性研究[J].红外,2020,41(11):22-26. |
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| 作者姓名： | 李震 高达 师景霞 王丛 |
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| 作者单位： | 华北光电技术研究所,北京100015;华北光电技术研究所,北京100015;华北光电技术研究所,北京100015;华北光电技术研究所,北京100015 |
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| 摘 要： | 采用分子束外延（Molecular Beam Epitaxy, MBE）方法在4 in硅衬底上进行了硅基碲化镉复合衬底生长工艺研究。使用光学轮廓仪、原子力显微镜、傅里叶红外光谱仪等设备对碲化镉薄膜进行了测试。结果表明，碲化镉薄膜的厚度均匀性、表面粗糙度、翘曲度和半峰宽等都达到了预期标准，能为外延碲镉汞薄膜提供良好的衬底。
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| 关 键 词： | 碲化镉 硅基 分子束外延 |
| 收稿时间： | 2020/8/13 0:00:00 |
| 修稿时间： | 2020/8/19 0:00:00 |
Study on Thickness Uniformity of 4-in Silicon-based Cadmium Telluride |
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| Li Zhen,Gao D,Shi Jingxia and Wang Cong.Study on Thickness Uniformity of 4-in Silicon-based Cadmium Telluride[J].Infrared,2020,41(11):22-26. |
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| Authors: | Li Zhen Gao D Shi Jingxia and Wang Cong |
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| Affiliation: | North China Research Institute of Electro-optics,North China Research Institute of Electro-optics,North China Research Institute of Electro-optics,North China Research Institute of Electro-optics |
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| Abstract: | Molecular beam epitaxy was used to study the growth of CdTe/Si composite substrates on a 4-inch silicon substrate. Optical profilometer, atomic force microscope, Fourier infrared spectrometer and other equipment were used to test the cadmium telluride film. The test and analysis results show that the thickness uniformity, surface roughness, warpage and half-width of the cadmium telluride film meet the expected standards, which can provide a good substrate for the epitaxial mercury cadmium telluride film. |
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