| 厚胶光刻中曝光光强对光化学反应速率的影响 |
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| 引用本文： | 唐雄贵,郭永康,杜惊雷,温圣林,刘波,罗伯靓,董小春.厚胶光刻中曝光光强对光化学反应速率的影响[J].光电工程,2006,33(5):36-40. |
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| 作者姓名： | 唐雄贵 郭永康 杜惊雷 温圣林 刘波 罗伯靓 董小春 |
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| 作者单位： | 1. 四川大学,物理科学与技术学院,四川,成都,610064
2. 中国科学院光电技术研究所,微细加工光学技术国家重点实验室,四川,成都,610209 |
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| 基金项目： | 中国科学院资助项目;中国科学院资助项目 |
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| 摘 要： | 针对用于厚层光刻的重氮萘醌类正性光刻胶,利用动力学模型,分析了光化学反应速率的影响因素;给出了光化学反应速率明显受光强变化的影响以致互易律失效的原因。对厚度24μm的光刻胶AZP4620在相同曝光量而光强分别为3.2mW/cm2和0.63mW/cm2的条件下进行了数值模拟和实验。当曝光光强为3.2mW/cm2时仅需300s,即可显影完全,而当曝光光强为0.63mW/cm2时需要的时间长达2400s,才显影完全,且面形轮廓差异较大。因此,在厚胶光刻中,当曝光光强较大时应适当减小曝光量,反之,应适当增加曝光量。
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| 关 键 词： | 厚胶光刻 光化学反应 光强 动力学模型 |
| 文章编号： | 1003-501X(2006)05-0036-05 |
| 收稿时间： | 2005-07-03 |
| 修稿时间： | 2006-03-06 |
Exposure intensity effect on the photochemical reaction speed in the lithography for thick film photo-resists |
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| TANG Xiong-gui,GUO Yong-kang,DU Jing-lei,WEN Sheng-lin,LIU Bo,LUO Bo-liang,DONG Xiao-chun.Exposure intensity effect on the photochemical reaction speed in the lithography for thick film photo-resists[J].Opto-Electronic Engineering,2006,33(5):36-40. |
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| Authors: | TANG Xiong-gui GUO Yong-kang DU Jing-lei WEN Sheng-lin LIU Bo LUO Bo-liang DONG Xiao-chun |
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| Affiliation: | 1. Department of Physics, Sichuan University, Chengdu 610064, China; 2. State Key Laboratory of Optical Technology for Microfabrication, the Institute of Optics and Electronics, the Chinese Academy of Sciences, Chengdu 610209, China |
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| Abstract: | Lithography technology for thick film photo-resists is a much more complicated process. The mechanism of exposure for the thick DNQ-Novolak-based photo-resists is discussed in detail, and then the effect of exposure intensity on the photochemical reaction speed is investigated by using kinetic model. Numerical simulation and experiments show that the simulated results are consistent with those from experiments. For the lithography of thick DNQ-Novolak based resists, the photochemical reaction speed is obviously affected by the intensity magnitude during exposure, which will lead to exposure reciprocity failure. The cause originates from increase in temperature of resists, due to the highly exothermic reaction during exposure. These results are useful for the lithographic process optimization of thick film photo-resists. |
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| Keywords: | Lithography for thick film photo-resists Photochemical reaction Intensity Kinetic model |
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