| Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications |
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| 引用本文： | Xue Chunlai,Cheng Buwen,Yao Fei,Wang Qiming. Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications[J]. 半导体学报, 2006, 27(1): 9-13 |
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| 作者姓名： | Xue Chunlai Cheng Buwen Yao Fei Wang Qiming |
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| 作者单位： | 中国科学院半导体研究所集成光电子国家重点联合实验室,北京100083 |
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| 基金项目： | 国家科技攻关项目 , 科技部科研项目 , 中国科学院资助项目 |
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| 摘 要： | 采用简单的双台面工艺制作了完全平面结构的2个单元4个发射极指的SiGe HBT.在没有扣除测试结构的影响下,当直流偏置IC=10mA,VCE=2.5V时,FT和fmax分别为1.8和10.1GHz.增益β为144.25,BVCBO为9V.
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| 关 键 词： | Si1-xGex/Si HBT 高频 大功率 无线功率放大器 SiGe HBT power RF wireless 高频大功率 设计和制作 Power Amplifier Fabrication Design Applications Wireless Bipolar Transistor DC bias point maximum oscillation frequency data large probe thickness junction breakdown volt |
| 文章编号： | 0253-4177(2006)01-0009-05 |
| 修稿时间： | 2005-07-13 |
Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications |
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| Xue Chunlai,Cheng Buwen,Yao Fei and Wang Qiming. Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications[J]. Chinese Journal of Semiconductors, 2006, 27(1): 9-13 |
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| Authors: | Xue Chunlai Cheng Buwen Yao Fei Wang Qiming |
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| Affiliation: | State Key Laboratory for Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory for Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory for Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;State Key Laboratory for Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | |
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| Keywords: | SiGe HBT power RF wireless |
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