| 皮秒激光直写还原石墨烯氧化物薄膜的研究 |
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| 引用本文： | 刘璇,王鹏波,李必奎,徐国军,王世明,张亚非.皮秒激光直写还原石墨烯氧化物薄膜的研究[J].光电子．激光,2017,28(10):1096-1100. |
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| 作者姓名： | 刘璇 王鹏波 李必奎 徐国军 王世明 张亚非 |
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| 作者单位： | 上海海洋大学 工程学院,上海 201306,上海海洋大学 工程学院,上海 201306,上海海洋大学 工程学院,上海 201306,上海海洋大学 工程学院,上海 201306,上海海洋大学 工程学院,上海 201306,上海交通大学 微纳米科学技术研究院,上 海 200240 |
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| 基金项目： | 国家自然基金项目(51005145)、上海市科委创新(12ZZ163)、国家教育部重点(212056) 、上海市优秀技术带头人(14XD1424300)和国家海洋局可再生能源专项(SHME2013JS01)资助 项目 (1.上海海洋大学 工程学院,上海 201306; 2.上海交通大学 微纳米科学技术研究院,上海 200240) |
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| 摘 要： | 利用皮秒激光直写还原绝缘石墨烯氧化物(GO) 薄膜,成功制备了图案化的导电石墨烯。先 通过旋涂法制备GO薄膜,再使用皮秒激光进行直写扫描,可以同步实现GO的还原和图案化 两个关键步 骤。光学显微镜成像显示,还原前后GO颜色发生明显变化,图案结构清晰,分辨率较高。结 合拉曼光谱和 X光电子能谱(XPS)进行表征分析的结果表明,激光直写区域石墨层缺陷程度和 含氧量均明显降低,GO还 原程度较高。图案化还原后GO(RP-GO)薄膜电学测试的结果表明,可以通过 改变皮秒激光 的输出功率对RP-GO的导电性能进行调控。本文技术一次性解决了石墨烯的大规模制备、图 案化成形和电学 性能调控三大难题,开辟了石墨烯基微电子器件生产制造的新道路。
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| 关 键 词： | 激光直写技术 石墨烯 微电子 图案化 还原 |
| 收稿时间： | 2017/3/7 0:00:00 |
Study on reduction of graphene oxide films using picosecond laser direct writing |
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| LIU Xuan,WANG Peng-bo,LI Bi-kui,XU Guo-jun,WANG Shi-ming and ZHANG Ya-fei.Study on reduction of graphene oxide films using picosecond laser direct writing[J].Journal of Optoelectronics·laser,2017,28(10):1096-1100. |
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| Authors: | LIU Xuan WANG Peng-bo LI Bi-kui XU Guo-jun WANG Shi-ming and ZHANG Ya-fei |
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| Affiliation: | College of Engineering Science and Technology,Shanghai Ocean University,Sh anghai,201306,China,College of Engineering Science and Technology,Shanghai Ocean University,Sh anghai,201306,China,College of Engineering Science and Technology,Shanghai Ocean University,Sh anghai,201306,China,College of Engineering Science and Technology,Shanghai Ocean University,Sh anghai,201306,China,College of Engineering Science and Technology,Shanghai Ocean University,Sh anghai,201306,China and Research Institute of Micro/Nanometer Science and Technology,Shanghai Jiao Tong Univer sity,Shanghai 200240,China |
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| Abstract: | Direct picoseconds(PS) laser writing has been used to reduce the insul ated graphene oxide (GO) films, for the preparation of conductive and patterning graphene.First,the GO films w ere prepared by spin coating method.Then PS laser direct writing was performed,which can achieve the reduct ion and pattern of GO in one step.Optical microscopy images show the colors of GO films before and after reduction change obviously.The patterns created with high resolution could be clearly identified.The deoxygena tion of the GO films by the PS laser reduction method was confirmed by using Raman spectroscopy and X-ray phot oelectron spectroscopy (XPS). In addition,the results of electrical test of the reduced and patterned grap hene oxides (RP-GO) films demonstrate the change of output power of PS laser can adjust and control the co nductivity of the RP-GO films. Large-scale production,patterning and electrical control can be resolved by dir ect PS laser writing technology,which might open the door for applications of graphene-based materials in electronic microdevices. |
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| Keywords: | laser direct writing technology graphene microelectronics pattern reduction |
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