| 高增益大功率达林顿晶体管的设计与制造 |
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| 引用本文： | 杨晶琦 徐婀丽. 高增益大功率达林顿晶体管的设计与制造[J]. 哈尔滨工业大学学报, 1994, 26(3): 59-64 |
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| 作者姓名： | 杨晶琦 徐婀丽 |
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| 作者单位： | 哈尔滨工业大学控制工程系 |
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| 摘 要： | 介绍了ｈｆｅ≥１２０００的两级功率达林顿器件的设计方法及关键技术，并对在１０Ａ比１ｍＡ的条件下实现低饱和压降的几项措施作了较详细的讨论。
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| 关 键 词： | 达林顿 电流增益 稳定电阻 晶体管 |
The Design and Fabrication of High Gain and Power of Darlington Transistor |
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| Yang Jingqi, Xu Eli, Wang Peilin. The Design and Fabrication of High Gain and Power of Darlington Transistor[J]. Journal of Harbin Institute of Technology, 1994, 26(3): 59-64 |
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| Authors: | Yang Jingqi Xu Eli Wang Peilin |
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| Affiliation: | Dept. of Control Engineering |
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| Abstract: | This paper introduces the design method and critical technology of two-staged power Darlington device whose hfe is no less than 12000, and make a detailed discussion on how to realize lower saturated voltage drop at a current ratio of 10A/1mA. |
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| Keywords: | Darlington current gain stable resistance saturated voltage drop |
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