| 工艺条件对高纯氧化铍陶瓷金属化性能的影响 |
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| 引用本文： | 张韶华,钟朝位,张树人,管建波,韦方明.工艺条件对高纯氧化铍陶瓷金属化性能的影响[J].电子元件与材料,2010,29(8). |
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| 作者姓名： | 张韶华 钟朝位 张树人 管建波 韦方明 |
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| 作者单位： | 1. 电子科技大学,电子薄膜与集成器件重点实验室,四川,成都,610054
2. 国营799厂,四川,宜宾,644001 |
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| 基金项目： | 国防基础研究资助项目 |
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| 摘 要： | 以W为原料,MnO、Al2O3和SiO2为活化剂,采用烧结金属粉末法,于1450～1500℃的还原性气氛(氨分解气)中烧结,在99BeO(纯度大于99%的BeO)陶瓷基板表面形成了W金属层,研究了活化剂含量、金属化膜厚度以及99BeO陶瓷晶粒大小对其金属化性能的影响。结果表明:当添加的活化剂质量分数为20%,金属化膜厚度约为35μm,BeO陶瓷晶粒大小约为39μm时,99BeO陶瓷金属化层的抗拉强度达到最大值65MPa。
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| 关 键 词： | 99BeO陶瓷 金属化 晶粒大小 工艺因素 |
Study on high purity beryllium oxide ceramic metallizating process improvement |
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| ZHANG Shaohua,ZHONG Chaowei,ZHANG Shuren,GUAN Jianbo,WEI Fangming.Study on high purity beryllium oxide ceramic metallizating process improvement[J].Electronic Components & Materials,2010,29(8). |
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| Authors: | ZHANG Shaohua ZHONG Chaowei ZHANG Shuren GUAN Jianbo WEI Fangming |
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| Affiliation: | ZHANG Shaohua1,ZHONG Chaowei1,ZHANG Shuren1,GUAN Jianbo2,WEI Fangming2(1.State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China,2.No.799 State-owned Factory,Yibin 644001,Sichuan Province,China) |
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| Abstract: | Metalized layers were formed on the surface of 99BeO(purity>99%) ceramics by the powder sintering method,with W as the raw material and MnO,Al2O3 as well as SiO2 as the activator.And,the sintering process was performed at 1 450～1 500 ℃ in reducing atmosphere(cracked ammonia).The effects of content of the activator,thickness of the metalized layer,and grain size of the 99BeO ceramics on the performance of the prepared metalized layer were investigated.The results indicate that the tensile strength of the metalized layer of the 99BeO ceramics reaches the maximum value of 65 MPa when the content of the activator is 20%(mass fraction),the thickness of the metalized layer is about 35 μm and the grain size of the 99BeO ceramics is about 39 μm. |
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| Keywords: | high purity beryllium oxide ceramics metallization grain size technological factor |
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