基于介观压阻效应的高g值加速度计设计

依据介观压阻效应原理,设计出一种以超晶格量子阱薄膜为敏感单元的高g值纳机电加速度计,期望利用超晶格量子阱薄膜的高灵敏特性,提高加速度计的灵敏度。结合GaAs基表面微机械加工工艺和控制孔技术完成了加速度计的加工。采用马歇特冲击的方法完成了加速度计的测试,并利用冲击响应谱分析了微加速度计在有外部冲击情况下的响应,研究结果表明:依据介观压阻效应原理和MEMS技术制作高g值纳机电加速度计具有可行性,从测试结果可以看出该微加速度计不但冲击响应信号与标准加速度计所测信号很接近,而且它们的响应一致性较好。

Design of High g Accelerometer Based on Meso-piezoresistance Effect

According to the theory of Meso-piezoresistance effect,a high g accelerometer is designed with the sensitive unit of thin film of quantum well.It is desirable that the application of thin film of quantum well may improve the sensitivity of accelerometer.The micro-accelerometer is processed by GaAs-based surface micromachining and control hole technology.The measurement of the structure is completed by means of shocking hammer,and the results are analyzed by the shock response spectrum.The experiment results show that fabricating high g accelerometer based on theory of Meso-piezoresistance effect and MEMS technology is feasible and the results of the designed accelerometer are well agreement with the standard accelerometer.