The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs |
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Authors: | Sanabria C. Chakraborty A. Hongtao Xu Rodwell M.J. Mishra U.K. York R.A. |
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Affiliation: | Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA; |
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Abstract: | The effect of gate leakage on the noise figure of AlGaN/GaN high electron mobility transistor (HEMTs) is explored. It is shown that these devices have a sizable amount of gate leakage that cannot be ignored when measuring their noise performance. Measurements across a single sample have more than 1 dB of variation in minimum noise figure. We will show this variation is because of gate leakage. A modified van der Ziel model is used to predict this large variation and allows easy noise figure prediction of HEMT and MESFET devices. |
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