首页 | 本学科首页   官方微博 | 高级检索  
     


Planar monolithic integration of a GaAs photoconductor and a GaAs field-effect transistor
Authors:Decoster   D. Vilcot   J.P. Constant   M. Ramdani   J. Verriele   H. Vanbremeersch   J.
Affiliation:Université des Sciences et Techniques de Lille, Centre Hyperfréquences et Semiconducteurs, UA CNRS 287, Villeneuve d'Ascq, France;
Abstract:A planar monolithic integrated photoreceiver suitable for 0.8 ?m-wavelength optical communication systems has been realised. It consists of a GaAs photoconductor associated with a GaAs FET. The steady state and dynamic gains and the noise properties of the photoconductor and of the integrated circuit have been investigated.
Keywords:
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号