| Photoluminescence Properties of Si1—xGex／Si Strained Layer Structures |
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| 引用本文： | PENGYingcai 等.Photoluminescence Properties of Si1—xGex／Si Strained Layer Structures[J].半导体光子学与技术,1996,2(3):168-174. |
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| 作者姓名： | PENGYingcai |
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| 作者单位： | HebeiUniversity,Baoding071002，CHN |
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| 摘 要： | The investigation on optical properties of Si1-xGex/Si strained layer structures has been carried out actively in recent years.The photoluminescence has be-come a brisker subject in the studies of its various optical properties.A research develop-ment to photoluminescence properties of some new Si1-xGex/Si strained layer struc-tures is introduced.
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| 关 键 词： | 应变层超点阵 光致发光 光电子器件 量子阱 |
| 收稿时间： | 1996/5/27 |
Photoluminescence Properties of Si_(1-x)Ge_x/Si Strained Layer Structures |
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| PENG Yingcai.Photoluminescence Properties of Si_(1-x)Ge_x/Si Strained Layer Structures[J].Semiconductor Photonics and Technology,1996,2(3):168-174. |
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| Authors: | PENG Yingcai |
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| Abstract: | The investigation on optical properties of Si1-xGex/Si strained layer structures has been carried out actively in recent years. The photoluminescence has become a brisker subject in the studies of its various optical properties. A research development on photoluminescence properties of some new Si1-x Gex/Si strained layer structures is introduced. |
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| Keywords: | Strained Layer Superlattices Photoluminescence Properties Optoelectronic Devices Quantum Wells |
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