| 一种渐变掺杂型pin光探测器的高速响应性能研究 |
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| 引用本文： | 何文君,黄永清,段晓峰,范鑫烨,骆 杨. 一种渐变掺杂型pin光探测器的高速响应性能研究[J]. 半导体光电, 2013, 34(3): 413-416 |
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| 作者姓名： | 何文君 黄永清 段晓峰 范鑫烨 骆 杨 |
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| 作者单位： | 北京邮电大学,北京,100876 |
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| 基金项目： | 国家“973”计划资助项目（2010CB327600）；国家自然科学基金重大国际（地区）合作研究项目（61020106007）；国际科技合作项目（2011DFR11010）；国家自然科学基金面上项目（61274044）；国家自然科学基金青年科学基金项目（61108048）；高等学校博士学科点专项科研基金——新教师类（20110005120018）；中央高校基本科研业务费专项资金（2011RC0403）. |
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| 摘 要： | 高速光探测器是高速光纤通信系统和网络中的关键器件,它要求光探测器具有宽的频率响应带宽和高量子效率。垂直入光型pin光探测器的高速性能和量子效率均受到吸收层厚度的限制。为了改善其高速性能,采用InGaAsP材料作为吸收层以及限制层渐变掺杂的方法,对垂直入光型pin光探测器的高速响应性能进行了理论研究和仿真,结果表明,高速响应达到了40GHz。与不采用渐变掺杂浓度的同种结构光探测器相比,高速响应性能显著提高。
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| 关 键 词： | 光通信 pin型光探测器 渐变掺杂 频率响应 |
| 收稿时间： | 2012-11-27 |
Characteristic Analysis on High Frequency Response for Graded doping pin Photodetector |
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| HE Wenjun,HUANG Yongqing,DUAN Xiaofeng,FAN Xinye,LUO Yang. Characteristic Analysis on High Frequency Response for Graded doping pin Photodetector[J]. Semiconductor Optoelectronics, 2013, 34(3): 413-416 |
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| Authors: | HE Wenjun HUANG Yongqing DUAN Xiaofeng FAN Xinye LUO Yang |
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| Affiliation: | State Key Lab. of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, CHN;State Key Lab. of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, CHN;State Key Lab. of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, CHN;State Key Lab. of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, CHN;State Key Lab. of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, CHN |
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| Abstract: | As the key device for high bit rate optical fiber communication systems and optical networks, high speed photodetectors require wide frequency bandwidth and high quantum efficiency simultaneously. Vertically illuminated p i n photodetector suffers such a tradeoff as the frequency response and quantum efficiency are both limited by the thickness of the absorption layer. To improve its high speed performance, InGaAsP is used as the absorbing material and the cladding layer is graded doped. In this paper, the high speed response performance of the vertically illuminated p i n photodetector is optimized by theoretical studies and simulation analysis, and its 3dB bandwidth reaches 40GHz. Compared to the photodetector without applying graded doping, the high speed performance is significantly improved. |
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| Keywords: | optical communication p-i-n photodetector graded doping frequency response |
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