| 镶嵌在SiO2薄膜中的锗纳米晶粒的光致发光 |
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| 引用本文： | 姚伟国 岳兰平. 镶嵌在SiO2薄膜中的锗纳米晶粒的光致发光[J]. 功能材料, 1997, 28(5): 477-478 |
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| 作者姓名： | 姚伟国 岳兰平 |
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| 作者单位： | 苏州大学物理系，中国科学院固体物理所，上海交大信息存储中心 |
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| 摘 要： | 采用６３０ｎｍ波长的激发光在室温下对镶嵌有锗纳米晶的ＳｉＯ２薄膜进行了光致姚研究。在室温下观察到了由于双光子吸收而导致的蓝色荧光峰。按照量子限域理论对所观察到的峰的特征进行了讨论。
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| 关 键 词： | 量子点 锗 纳米晶 二氧化硅 光致发光 半导体 |
Visible Photoluminescence of Ge Nanocrystallites Embedded in SiO 2 Thin Film |
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| Yao Weiguo Yue Lanping + Qi Zhenzhong ++ He Yizhen +. Visible Photoluminescence of Ge Nanocrystallites Embedded in SiO 2 Thin Film[J]. Journal of Functional Materials, 1997, 28(5): 477-478 |
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| Authors: | Yao Weiguo Yue Lanping + Qi Zhenzhong ++ He Yizhen + |
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| Abstract: | A SiO 2 thin film embedded with Ge nanocrystallites was selected for the photoluminescence measurement at room temperature(RT) with exciting beam of 630nm. Visible peaks in blue region, which were caused by two photon absorption, were clearly observed at RT. The feature of the peaks was discussed according to quantum confinement effect. |
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| Keywords: | quantum dots. photoluminescence semiconductor |
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