复合负反馈技术在宽带有源微波冷噪声源中的应用

针对C波段宽带有源微波冷噪声源设计中输出低温噪声性能与工作带宽的矛盾，文中选用Avago公司的ATF38143型GaAs基赝掺杂高电子迁移率晶体管(pHEMT)设计了一款C波段宽带有源微波冷噪声源。采用串、并联负反馈电路拓扑结构，在保证低温噪声输出性能的同时提升了工作带宽，其中心频点为6.95 GHz,工作带宽为1.3 GHz,相对带宽为18.7%,常温条件下带内输出最低噪声温度为141.62 K,工作频段可覆盖C波段微波辐射计中心频点为6.60 GHz、6.93 GHz、7.30 GHz的三个通道。

Application of Complex Negative Feedback Technology inBroadband Active Microwave Cold Noise Source

Aiming at the contradiction between output low temperature noise performance and working bandwidth in the designof C-band broadband active microwave cold noise source, in this paper the ATF38143 GaAs-based pseudomorphic high electronmobility transistor (pHEMT) of Avago company is selected to design a C-band broadband active microwave cold noise source. Theseries and parallel negative feedback circuit topology improves the working bandwidth while ensuring the low-temperature noise outputperformance. Its center frequency is 6.95 GHz, the working bandwidth is 1.3 GHz, and the relative bandwidth is 18.7%. Itslowest in-band output noise temperature is 141. 62 K under the normal temperature conditions, and the working frequency band cancover the three channels of the C-band microwave radiometer center frequency points of 6.60 GHz, 6.93 GHz, and 7.30 GHz.