| Research on Performance of ZnS：TbF3 Thin Film Electroluminescence Device |
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| 作者姓名： | 何大伟 杨胜 关亚菲 权善玉 王永生 徐叙瑢 |
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| 作者单位： | [1]InstituteofOptoelectronicTechnology,NorthernJiaotongUniversity,Beijing100044,China [2]ShenyangUniversityofTechnology,1100230,China） |
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| 摘 要： | The electroluminescence of ZnS doped with terbium fluoride thin films prepared by radio frequency magnetron sputtering method was reported. The characteristics of the ZnS : TbF3 thin film electroluminescence devices, such as film characteristics of the ZnS:Tb active layer, substrate temperatures during magnetron sputtering and Tb concentration of the active layer, were systematically investigated. The results show that annealing can evidently improve the luminescence performance of the luminescence device.
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| 关 键 词： | 磁电管溅射 电致发光 稀土 “硫化锌：三氟化铽薄膜” 电子束蒸发 |
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