| 正向栅控二极管的 R- G电流直接表征 NMOSFET沟道 pocket或 halo注入区 |
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| 引用本文： | 何进,黄爱华,张兴,黄如.正向栅控二极管的 R- G电流直接表征 NMOSFET沟道 pocket或 halo注入区[J].半导体学报,2001,22(7):826-831. |
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| 作者姓名： | 何进 黄爱华 张兴 黄如 |
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| 作者单位： | 北京大学微电子学研究所!北京100871 |
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| 摘 要： | 使用半导体器件数值分析工具 DESSISE- ISE,对正向栅控二极管 R- G电流表征 NMOSFET沟道 pocket或halo注入区进行了详尽的研究 .数值分析表明 :由于栅控正向二极管界面态 R- G电流的特征 ,沟道工程 pocket或halo注入区的界面态会产生一个独立于本征沟道界面态 R- G电流特征峰的附加特征峰 .该峰的幅度对应于 pocket或 halo区的界面态大小 ,而其峰位置对应于 pocket或 halo区的有效表面浓度 .数值分析还进一步显示了该附加特征峰的幅度对 pocket或 halo区的界面态变化的敏感性和该峰的位置对 pocket或 halo区的有效表面浓度变化的敏感性 .根据提出的简单
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| 关 键 词： | 正向栅控二极管 R-G电流 NMOSFET pocket或halo注入区 界面态 有效表面浓度 |
Channel Lateral Pocket or Halo Region of NMOSFET Characterized by Interface State R G Current of the Forward Gated Diode |
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| HE Jin,HUANG Ai hua,ZHANG Xing and HUANG Ru.Channel Lateral Pocket or Halo Region of NMOSFET Characterized by Interface State R G Current of the Forward Gated Diode[J].Chinese Journal of Semiconductors,2001,22(7):826-831. |
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| Authors: | HE Jin HUANG Ai hua ZHANG Xing and HUANG Ru |
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| Abstract: | The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demonstrates that the effective surface doping concentration and the interface state density of the pocket or halo region are interface states R G current peak position dependent and amplitude dependent,respectively.It can be expressed quantitatively according to the device physics knowledge,thus,the direct characterization of the interface state density and the effective surface doping concentration of the pocket or halo becomes very easy. |
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| Keywords: | forward gated diode R G current MOSFET pocket or halo implant region interface states effective surface doping concentration |
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