Electrodeposition of CuInxGa1−xSe2 thin films |
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Authors: | R Friedfeld R P Raffaelle J G Mantovani |
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Affiliation: | Department of Physics and Space Sciences, Florida Institute of Technology, 150 W. University Blvd., Melbourne, FL, 32901, USA |
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Abstract: | CuInxGa1−xSe2 (CIGS) polycrystalline thin films with various Ga to In ratios were grown using a new two-step electrodeposition process. This process involves the electrodeposition of a Cu–Ga precursor film onto a molybdenum substrate, followed by the electrodeposition of a Cu–In–Se thin film. The resulting CuGa/CuInSe bilayer is then annealed at 600°C for 60 min in flowing Argon to form a CIGS thin film. The individual precursor films and subsequent CIGS films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and Auger electron spectroscopy. The as-deposited precursor films were found to be crystalline with a crystal structure matching that of CuGa2. The annealed bi-layers were found to have the same basic chalcopyrite structure of CuInSe2, but with peak shifts due to the Ga incorporation. Energy dispersive spectroscopy results show that the observed shifts correlate to the composition of the films. |
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Keywords: | CIGS Electrodeposition Photovoltaics |
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