Low resistivity transparent conducting CdO thin films deposited by DC reactive magnetron sputtering at room temperature |
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Authors: | Qiang Zhou BinBin Hu Chen Chen Lina Zhao Chao Wang |
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Affiliation: | State Key Laboratory for Silicon Materials, CMSCE, Zhejiang University, Hangzhou 310027, China |
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Abstract: | Transparent conducting cadmium oxide (CdO) films were deposited on PET (polyethylene terephthalate) substrate by DC reactive magnetron sputtering at room temperature. All the films deposited at room temperature were polycrystalline in rock-salt structure. Dependences of the physical properties of the CdO films on the oxygen partial pressure were systematically studied. The films deposited at low oxygen flow rate were (200) oriented, while the films deposited at an oxygen flow rate greater than 20 sccm were (111) oriented. The average grain size of the CdO films decreased as the oxygen flow rate increases as determined by XRD and SEM. The Hall effect measurement showed that CdO films have high concentration, low resistivity, and high mobility. Both the mobility and the concentration of the carrier decreased with the increase of the oxygen flow rate. A minimum sheet resistance of 36.1 Ω/□, or a lowest resistivity of 5.44 × 10− 4 Ω cm (6.21 × 1020/cm3, μ = 19.2 cm2/Vs) was obtained for films deposited at an oxygen flow rate of 10 sccm. |
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Keywords: | Cadmium oxide Thin films Magnetron sputtering Electrical properties |
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