Physical properties of flash evaporated In2O3 films prepared at different substrate temperatures |
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Authors: | S Kaleemulla |
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Affiliation: | Department of Physics, Sri Venkateswara University, Tirupati-517 502, India |
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Abstract: | Indium oxide (In2O3) thin films were prepared by flash evaporated technique under various substrate temperatures in the range of 303-673 K and systematically studied the structural, electrical and optical properties of the deposited films. The films formed at substrate temperatures of < 373 K were amorphous while those deposited at higher substrate temperatures (≥ 373 K) were polycrystalline in nature. The optical band gap of the films decreased from 3.71 eV to 2.86 eV with the increase of substrate temperature from 303 K to 673 K. Figure of merit of the films increased from 2.8 × 103 Ω− 1 cm− 1 to 4.2 × 103 Ω− 1 cm− 1 with increasing substrate temperature from 303 K to 573 K, thereafter decreased to 2.2 × 103 Ω− 1 cm− 1 at higher temperature of 673 K. |
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Keywords: | Indium oxide Flash evaporation Substrate temperature Thin films |
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