Transparent conductive film having sandwich structure of gallium-indium-oxide/silver/gallium-indium-oxide |
| |
Authors: | Yoshiyuki Abe Tokuyuki Nakayama |
| |
Affiliation: | Ichikawa Research Laboratory, Sumitomo Metal Mining Co., Ltd., Nakakokubun, Ichikawa-shi, Chiba, 272-8588 Japan |
| |
Abstract: | New transparent conductive films having the sandwich structure of gallium-indium-oxide/silver/gallium-indium-oxide (GIO/Ag/GIO) were prepared by conventional magnetron sputtering method at ambient substrate temperature. The electrical and optical properties of the films were compared with those of conventional indium-tin-oxide (ITO) films and ITO/Ag/ITO sandwich films. The GIO/Ag/GIO (40 nm/8 nm/40 nm) sandwich films, in which the GIO film was deposited using a GIO ceramic target with In content [In/(Ga + In)] of 10 at.%, exhibited a low sheet resistance of 11.3 Ω/sq and a large average transmittance of over 92.9% in the visible region (400-800 nm). This GIO/Ag/GIO films also exhibited a novel characteristic of transparency in the ultraviolet region; they showed high transmittance of 82.2% at the wavelength of 330 nm and 40.8% at the wavelength of 280 nm, which was not shown in the ITO films and the ITO/Ag/ITO sandwich films. The GIO/Ag/GIO sandwich films are useful as transparent electrode for emitting devices of ultraviolet radiation because of both their high conductivity and high transparency in the ultraviolet region. |
| |
Keywords: | Gallium Indium Silver Transparent conductive film Ultraviolet |
本文献已被 ScienceDirect 等数据库收录! |
|