Effect of substrate temperature on HWCVD deposited a-SiC:H film

Hydrogenated amorphous silicon carbon (a-SiC:H) films were deposited using pure SiH₄ and C₂H₂ without hydrogen dilution by hot wire chemical vapor deposition (HWCVD) technique. The photoluminescence, optical, and structural properties of these films were systematically studied as a function of substrate temperature (T_s). a-SiC:H films deposited at lower substrate temperature (T_s) show degradation in their structural, optical and network properties. The hydrogen content (C_H) in the films was found to be increased with decrease of T_s studied. Photoluminescence spectra shift to higher energy and less FWHM at high T_s. Raman spectroscopic analysis showed that structural disorder increases with decrease in the T_s.