Polycrystalline films of tungsten-doped indium oxide prepared by d.c. magnetron sputtering

Electrical and optical properties of polycrystalline films of W-doped indium oxide (IWO) were investigated. These films were deposited on glass substrate at 300 °C by d.c. magnetron sputtering using ceramic targets. The W-doping in the sputter-deposited indium oxide film effectively increased the carrier density and the mobility and decreased the resistivity. A minimum resistivity of 1.8 × 10^− 4 Ω cm was obtained at 3.3 at.% W-doping using the In₂O₃ ceramic targets containing 7.0 wt.% WO₃. The 2.2 at.% W-doped films obtained from the targets containing 5.0 wt.% WO₃, showed the high Hall mobility of 73 cm² V^− 1 s^− 1 and relatively low carrier density of 2.9 × 10²⁰ cm^− 3. Such properties resulted in novel characteristics of both low resistivity (3.0 × 10^− 4 Ω cm) and high transmittance in the near-infrared region.