Study on the Hall-effect and photoluminescence of N-doped p-type ZnO thin films

N-doped, p-type ZnO thin films have been grown by plasma-assisted metal-organic chemical vapor deposition method. The results under optimized growth conditions included a resistivity of 1.72 Ω cm, a Hall mobility of 1.59 cm²/V s, and a hole concentration of 2.29 × 10¹⁸ cm^− 3, and were consistently reproducible. A N-related free-to-neutral-acceptor emission and an associated phonon replica were evident in room temperature photoluminescence spectra, from which the N acceptor energy level in ZnO was estimated to be 180 meV above the valence band maximum.