Annealing effect on structures and luminescence of amorphous SiN films |
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| Authors: | Jun Xu Yunjun Rui Deyuan Chen Jiaxin Mei Liping Zhou Zhanhong Cen Wei Li Kunji Chen |
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| Affiliation: | National Laboratory of Solid State Microstructures and Department of Physics, Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, Nanjing University, Nanjing 210093, China |
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| Abstract: | The microstructures and chemical bonding configurations of amorphous silicon nitride films with various compositions are investigated. Room temperature photoluminescence is observed which depended on the film concentrations. The post-annealing treatment at moderate temperature region of 700-900 °C is performed and the annealing effect on the structures and luminescence is studied. It is found that the structural rearrangements occurred after thermal annealing due to the effusion of hydrogen from the films. The luminescence is also changed after annealing and the possible originations are briefly discussed. |
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| Keywords: | Optical materials and properties Luminescence Chemical vapor deposition |
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