SOI/SOS MOSFET compact macromodel taking into account radiation effects |
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| Authors: | K O Petrosyants L M Sambursky I A Kharitonov A P Yatmanov |
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| Affiliation: | 1.Moscow State Institute of Electronics and Mathematics,Moscow,Russia;2.Sedakov Research Institute for Measuring Systems,Nizhnii Novgorod,Russia |
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| Abstract: | A compact BSIMSOI-RAD macromodel for SOI/SOS CMOS transistors is developed that takes into account the radiation effects.
An automated procedure for determination of macromodel parameters is described and shown to be useful for analyzing radiation
hardness of CMOS IC fragments depending on the total absorbed dose. The simulation time is estimated. |
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