| Effect of annealing treatment onoptical and electrical properties of ZnO films |
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| 引用本文： | 王万录 廖克俊 李丽 吴子华 王永田 张津. Effect of annealing treatment onoptical and electrical properties of ZnO films[J]. 中国有色金属学会会刊, 2005, 15(2): 410-413 |
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| 作者姓名： | 王万录 廖克俊 李丽 吴子华 王永田 张津 |
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| 作者单位： | DepartmentofAppliedPhysics,ChongqingUniversity,Chongqing400044,China |
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| 摘 要： | The ZnO-Al films were prepared by R. F. magnetron sputtering system using a Zn-Al target (with purity of 99.99 %). The obtained films were characterized by X-ray diffraction, SEM and optical and electrical measurements. The experimental results show that the properties of ZnO films can be further improved by annealing treatment. The crystallinity of ZnO films becomes better, and the optical gap energy is decreased, but thermoelectric power is enhanced after heat treatment. The optical gap energy decreases from 3.75 eV to 3.68 eV when the annealing temperature increases from 25℃ to 400℃. This can be ascribed to the decrease of carrier concentration, resulting in Burstein shift.
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| 关 键 词： | 氧化锌薄膜 退火处理 塞贝克效应 光学能隙 半导体 |
Effect of annealing treatment on optical and electrical properties of ZnO films |
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| WANG Wan-lu,LIAO Ke-jun,LI Li,WU Zhi-hua,WANG Yong-tian,ZHANG Jin. Effect of annealing treatment on optical and electrical properties of ZnO films[J]. Transactions of Nonferrous Metals Society of China, 2005, 15(2): 410-413 |
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| Authors: | WANG Wan-lu LIAO Ke-jun LI Li WU Zhi-hua WANG Yong-tian ZHANG Jin |
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| Abstract: | The ZnO-Al films were prepared by R. F. magnetron sputtering system using a Zn-Al target (with purity of 99.99%). The obtained films were characterized by X-ray diffraction, SEM and optical and electrical measurements. The experimental results show that the properties of ZnO films can be further improved by annealing treatment. The crystallinity of ZnO films becomes better, and the optical gap energy is decreased, but thermoelectric power is enhanced after heat treatment. The optical gap energy decreases from 3.75 eV to 3.68 eV when the annealing temperature increases from 25 ℃ to 400 ℃. This can be ascribed to the decrease of carrier concentration, resulting in Burstein shift. |
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| Keywords: | ZnO films annealing treatment Seebeck effect optical gap energy |
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