| 垂直堆垛InAs量子点材料的分子束外延生长 |
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| 引用本文： | 李树玮,小池一步,矢野满明.垂直堆垛InAs量子点材料的分子束外延生长[J].稀有金属,2004,28(1):207-209. |
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| 作者姓名： | 李树玮 小池一步 矢野满明 |
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| 作者单位： | 1. 中山大学光电材料与技术国家重点实验室,广东,广州,510275
2. 大阪工业大学新材料研究中心,大阪,535-8585,日本 |
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| 摘 要： | 用MBF设备以Stranski-Krastanov生长方式外延生长了5个周期垂直堆垛的InAs量子点，在生长过程中使用对形状尺寸控制法来提高垂直堆垛InAs量子点质量和均匀性。样品外延的主要结构是500nm的GaAs外延层，15nm的Al0．5Ga0．5As势垒外延层，5个周期堆跺的InAs量子点，50nm的Al0．5Ga0．5Asnm势垒外延层等。在生长过程中用反射式高能电子衍射仪(RHEED)实时监控。生长后用原子力显微镜(AFM)进行表面形貌的表征，再利用光制发光(PL)对InAs量子点进行观测。
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| 关 键 词： | 晶体生长 垂直堆垛的InAs量子点 分子束外延（MBE） 光致发光 |
| 文章编号： | 0258-7076(2004)01-0207-03 |
Growth of Vertically Stacked and Self-Assembled InAs Quantum Dots |
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| Li Shuwei ,Koike Kazuto ,Yano Mitsuaki.Growth of Vertically Stacked and Self-Assembled InAs Quantum Dots[J].Chinese Journal of Rare Metals,2004,28(1):207-209. |
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| Authors: | Li Shuwei Koike Kazuto Yano Mitsuaki |
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| Affiliation: | Li Shuwei 1*,Koike Kazuto 2,Yano Mitsuaki 2 |
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| Abstract: | The epilayer of vertically stacked, self assembled InAs Quantum Dots (QDs) was grown by molecular beam epitaxy (MBE) in Stranski Krastanov growth mode with solid sources in non cracking K cells. The surface morphologies were measured by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). To improve the morphology, a size and density controlled growth procedure for the vertically stacked InAs QDs was employed. The 5 period vertically stacked InAs QDs in the barrier layer of a field effect type structure were measured by photoluminescence property. |
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| Keywords: | crystal growth vertically stacked and self assembled quantum dots molecular beam epitaxy photoluminescence property |
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