InSb衬底表面的氧化层研究

能在高温下工作的InSb基InAlSb红外探测器是新一代红外探测器的发展方向。对衬底表面氧化层的研究是该研究方向的基础。利用椭偏仪(Spectroscopic Ellipsometry，SE)、X射线光电子能谱分析(X-ray photoelectron spectroscopy, XPS)对用现工艺生长的InSb衬底表面氧化层进行了分析。从常用的腐蚀液中挑选了较优的腐蚀液，调节配比，试验加入无机酸后的效果，获得了较优的表面氧化层处理液。对处理后的表面氧化层的稳定性进行了对比，分析了其主要成分的变化，最终获得了满足Epi-ready InSb晶片表面氧化层参数的衬底，为后面高温工作探测组件的研究打好了基础。

Study of Surface Oxide Layer of InSb Substrate

InSb-based high operation temperature InAlSb infrared detectors are the development direction of a new generation of infrared detectors. The study of surface oxide layers of detector substrates is the basis of the direction. Spectroscopic Ellipsometry (SE) and X-ray Photoelectron Spectroscopy (XPS) are used to analyze the surface oxide layers of the detector substrates grown by the existing processing. By selecting better corrosion liquid from common corrosion liquid, adjusting its ratio and adding inorganic acid, better surface oxidation treatment liquid is obtained. The stability of the surface oxide layer after treatment is compared and the variation of the main components is analyzed. Finally, the substrates which meet the parameters of surface oxide layers for Epi-ready InSb wafers are obtained. This work lays the foundation for subsequent study of high operation temperature detection components.