集成电路总剂量加固技术的研究进展

对集成电路总剂量加固技术的研究进展进行了分析。集成电路技术在材料、器件结构、版图设计及系统结构方面的革新，促进了总剂量加固技术的发展。新的总剂量加固技术提高了集成电路的抗总剂量能力，延长了电子系统在辐射环境下的使用寿命。文中总结了近年来提出的新型的总剂量抗辐射加固技术，如采用Ag-Ge-S、单壁碳纳米管材料(SWCNT)、绝缘体上漏/源(DSOI)器件结构、八边形的门(OCTO)版图、备用偏置三模块冗余(ABTMR)系统等加固方法，显著提高了器件或电子系统的总剂量抗辐射能力。研究结果有助于建立完整的总剂量加固体系，提升抗辐射指标，对促进总剂量加固技术的快速发展具有一定的参考价值。

Research progress on the technology of total dose radiation hardened

The research process of the technology of total dose radiation hardening is analyzed. Integrated circuit technology innovation in materials, device structure, layout design and system structure, promotes the development of the total dose reinforcement technology. The new technology increases the capability of total dose reinforcement and extends the life of the electronic systems in the radiation environment. The recently proposed new total dose radiation hardening technologies, such as using new material like Ag-Ge-S, Single-Wall Carbon Nanotube(SWCNT) etc., adopting Drain/Source On Insulator (DSOI) device structure, OCTOgonal-gate(OCTO) layout, Alternate Biasing Triple Modular Redundancy (ABTMR) system structure, are summarized. These technologies increase the resistance capability to total dose radiation of devices and electronic systems significantly. The research results will help to establish a complete total dose reinforcement system to enhance the anti-radiation index, and can provide reference for promoting the rapid development of total dose radiation hardening technology.