Photoluminescence and raman scattering characterization of silicon-doped In0.52Al0.48As grown on InP (100) substrates by molecular beam epitaxy |
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Authors: | S. F. Yoon Y. B. Miao K. Radhakrishnan S. Swaminathan |
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Affiliation: | (1) School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 2263 Singapore, Republic of Singapore |
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Abstract: | Growth of In0.52Al0.48As epilayers on InP (100) substrates by molecular beam epitaxy at different silicon doping levels is carried out. The doped samples show an inverted S-shaped dependence of the PL peak energy variation with the temperature which weakens at high doping levels due to a possible reduction in the donor binding energy. There is a reduction in both the AlAs-like and InAs-like longitudinal-optic (LO) phonon frequencies and a broadening of the LO phonon line shape as the doping level is increased. The PL intensity also showed in increasing degrees at higher doping levels, a temperature dependence which is characteristic of disordered and amorphous materials. |
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Keywords: | InAlAs molecular beam epitaxy (MBE) photoluminescence Raman scattering |
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