Negative-bias temperature instability cure by process optimization |
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Authors: | Scarpa A. Ward D. Dubois J. van Marwijk L. Gausepohl S. Campos R. Kwang Ye Sim Cacciato A. Kho R. Bolt M. |
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Affiliation: | ICN Philips Semicond., Nijmegen, Netherlands; |
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Abstract: | Negative-bias temperature instability (NBTI) is a major challenge for modern integrated circuits and may represent a key factor for the success of a technology. In this paper, NBTI is approached from a process point of view, providing a general picture of the manufacturing process steps that affect NBTI performance. It is found that several process steps may be optimized to reduce the NBTI susceptibility of p-type MOSFETs. The choice of the cure approach depends on the device application, on the technology, and also on the equipment. |
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