1.1 kV 4H-SiC power UMOSFETs |
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Authors: | Agarwal AK Casady JB Rowland LB Valek WF White MH Brandt CD |
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Affiliation: | Northrop Grumman Sci. & Technol. Center, Pittsburgh, PA; |
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Abstract: | Silicon Carbide (4H-SiC), power UMOSFETs were fabricated and characterized from room temperature to 200°C. The devices had a 12-μm thick lightly doped n-type drift layer, and a nominal channel length of 4 μm. When tested under FluorinertTM at room temperature, blocking voltages ranged from 1.0 kV to 1.2 kV. Effective channel mobility ranged from 1.5 cm2/V.s at room temperature with a gate bias of 32 V (3.5 MV/cm) up to 7 cm2/V.s at 100°C with an applied gate bias of 26 V (2.9 MV/cm). Specific on-resistance (Ron,sp) was calculated to be as low as 74 mΩ.cm2 at 100°C under the same gate bias |
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