Aluminium-induced crystallisation of silicon on glass for thin-film solar cells |
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Authors: | Oliver Nast Stephan Brehme Stephen Pritchard Armin G Aberle Stuart R Wenham |
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Abstract: | Aluminium-induced crystallisation of amorphous silicon is studied for the formation of continuous polycrystalline silicon thin-films on low-temperature glass substrates. It is shown to be a promising alternative to laser crystallisation and solid-phase crystallisation. Silicon grain sizes of larger than 10 μm are achieved at temperatures of around 475°C within annealing times as short as 1 h. The Al doping concentration of the poly-Si films depends on the annealing temperature, as revealed by Hall effect measurements. A poly-Si/Al/glass structure presented here can serve as a seeding layer for the epitaxial growth of polycrystalline silicon thin-film solar cells, or possibly as the base material with the back contact incorporated. |
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Keywords: | Polycrystalline silicon Thin-film solar cells Aluminium-induced crystallisation Solid-solid interaction Carrier concentration |
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