Pulsed laser annealing of self-organized InAs/GaAs quantum dots |
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| Authors: | S. Chakrabarti S. Fathpour K. Moazzami J. Phillips Y. Lei N. Browning P. Bhattacharya |
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| Affiliation: | (1) Department of Electrical Engineering and Computer Science, University of Michigan, 48109-2122 Ann Arbor, MI;(2) Department of Physics, University of Illinois, 60607-7059 Chicago, IL;(3) MS 72–150 Lawrence Berkeley National Laboratory, National Center for Electron Microscopy, 94720 Berkeley, CA |
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| Abstract: | The effect of pulsed laser annealing (PLA), using an excimer laser, on the luminescence efficiency of self-organized InAs/GaAs and In0.4Ga0.6As/GaAs quantum dots has been investigated. It is found that such annealing can enhance both the peak and integrated photoluminescence (PL) efficiency of the dots, up to a factor of 5–10 compared to as-grown samples, without any spectral shift of the luminescence spectrum. The improved luminescence is attributed to the annealing of nonradiative point and extended defects in and around the dots. |
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| Keywords: | Quantum dots self-organized epitaxy laser annealing |
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