A comparative EPR study of ion implantation induced damage in Si, Si1−xGex (x ≠ 0) and SiC |
| |
Authors: | R. C. Barklie |
| |
Affiliation: | Physics Department, Trinity College, Dublin 2, Ireland |
| |
Abstract: | Electron Paramagnetic Resonance (EPR) measurements have been made to investigate the build up of damage in silicon in relaxed crystalline Si1−xGex (x = 0.04, 0.13, 0.24, 0.36) and in 6H-SiC as a result of increasing the ion dose from low levels (1012 cm−2) up to values (1015 cm−2) sufficient to produce an amorphous layer. Si, Si1−xGex (x ≠ 0) and SiC were implanted at room temperature with 1.5 MeV Si, 2 MeV Si and 0.2 MeV Ge ions respectively. A comparison is made between the ways in which the type and population of paramagnetic defects depend on ion dose for each material. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|