MOCVD生长双波长发光二极管

根据白光照明和可变换波长的光通信中对单芯片双波长发光二极管(LED)要求,在分析了反向偏置隧道结性质的基础上,设计了用反向偏置隧道结连接两个有源区的单芯片双波长LED,用金属有机化学气相沉积技术(MOCVD)在GaAs衬底上一次外延生长了同时发射两种波长的LED,其包含一个AlGaInP量子阱有源区和一个GaInP量子阱有源区,两个有源区由隧道结连接;通过后工艺制备了双波长LED器件,在20mA电流注入下,可以同时发射626nm和639nm两种波长,光强是127mcd,正向电压是4.17V。与传统的单有源区LED进行对比表明,双波长LED有较强的光强;对比单有源区LED的2.08V正向电压,考虑到双波长LED包含隧道结和两个有源区,隧道结上的压降很小。

AlGaInP dual-wavelength light emitting diodes with MOCVD growth

In order to meet the need of solid state white light illumination and variable wavelength light source used in optical communication,based on the analysis of the property of the reverse biased tunnel junction,we design monolithic-integr ated dual-wavelength light emitting diodes which are connected by a reverse biased t unnel junction.By metal organic chemical vapor deposition (MOCVD) on a GaAs substrate in a single step,we grew epitaxially this device that can emit two kinds of wavelengths of l ight simultaneously.This kind of monolithic integration device consists of two active regions, an AlGaInP multi-quantum well active region and a GaInP multi-quantum well act ive region,which are connected by a reverse biased tunnel junction.Through the proc ess,we fabricated the LEDs.At 20mA Dc injection current,the devices can emit wa velengths of 626nm and 639nm at the same time,the output lig ht intensity is 127mcd,and the forward voltage is 4.17V.The test results are com pared with those of the traditional one-active-region light emitting diodes.The outp u t light intensity of dual-wavelength LEDs is higher than that of traditional LE Ds.The forward voltage of dual-wavelength LEDs is not high.