Properties of porous silicon-nitride materials

Conclusions Newly developed porous silicon-nitride materials from elements have a thin walled porous structure, which in comparison with known materials for the same kind and similar porosity have a lower thermal conductivity, high strength, deformability, and thermal-shock resistance as well as satisfactory resistance to oxidation at temperatures of about 800°C.Translated from Ogneupory, No. 7, pp. 20–23, July, 1988.