Integrated 1.3-/spl mu/m DFB laser electroabsorption modulator based on identical MQW double-stack active layer with 25-GHz modulation performance |
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| Authors: | B. Stegmueller C. Hanke |
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| Affiliation: | Corporate Res., Infineon Technol. AG, Munich, Germany; |
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| Abstract: | 1.31-/spl mu/m electroabsorption modulators monolithically integrated with a DFB laser diode have been realized using an identical InGaAsP-InP multiple quantum-well-layer structure composed of two different QW types. Low laser threshold currents <13 mA and high 3-dBe cutoff frequency up to /spl sim/25 GHz have been measured. |
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