Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of <Emphasis Type="Italic">n</Emphasis>-type |
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Authors: | Email author" target="_blank">V?V?EmtsevEmail author A?M?Ivanov V?V?Kozlovski A?A?Lebedev G?A?Oganesyan N?B?Strokan G?Wagner |
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Affiliation: | 1.Ioffe Physicotechnical Institute,Russian Academy of Sciences,St. Petersburg,Russia;2.St. Petersburg State Polytechnic University,St. Petersburg,Russia;3.Leibniz-Institute for Crystal Growth,Berlin,Germany |
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Abstract: | Effects of irradiation with 0.9 MeV electrons as well as 8 and 15 MeV protons on moderately doped n-Si grown by the floating zone (FZ) technique and n-SiC (4H) grown by chemical vapor deposition are studied in a comparative way. It has been established that the dominant radiation-produced
defects with involvement of V group impurities differ dramatically in electron- and proton-irradiated n-Si (FZ), in spite of the opinion on their similarity widespread in literature. This dissimilarity in defect structures is
attributed to a marked difference in distributions of primary radiation defects for the both kinds of irradiation. In contrast,
DLTS spectra taken on electron- and proton-irradiated n-SiC (4H) appear to be similar. However, there are very much pronounced differences in the formation rates of radiation-produced defects.
Despite a larger production rate of Frenkel pairs in SiC as compared to that in Si, the removal rates of charge carriers in
n-SiC (4H) were found to be considerably smaller than those in n-Si (FZ) for the both electron and proton irradiation. Comparison between defect production rates in the both materials under
electron and proton irradiation is drawn. |
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