| Abstract: | We present a three‐dimensional (3D) semi‐classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two‐dimensional (2D) models. The advantages of our model, in terms of accuracy in modelling the physics behind the operation of nanodevices, are presented by applying it to T‐branch junctions based on InGaAs/InAlAs heterostructures. Simulation of a T‐branch junction with a Schottky gate terminal is presented, using both 2D and 3D models, demonstrating the necessity of using 3D simulation models to study the physics of complex‐geometry nanostructures. Copyright © 2009 John Wiley & Sons, Ltd. |
