|
|||||
|
|
Comparison of Single-Step and Two-Step EBL T-Gates Fabrication Techniques for InP-Based HEMT |
|
| Affiliation: | 1. School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| Abstract: | |
| Keywords: | T-Gate HEMTs EBL technique Two-step EBL technique Polymethylmethacrylate (PMMA) |
| 本文献已被 万方数据 等数据库收录！ | |