Elimination of bipolar induced drain breakdown and singletransistor latch in submicron PD SOI MOSFET

For the first time, we report the combined application of a SiGe source and a delta-doped p⁺ region in a PD SOI MOSFET to minimize the impact of floating body effect on both the drain breakdown voltage and the single transistor latch. Our results demonstrate that the proposed SOI structure exhibits as large as 200% improvement in the breakdown voltage and is completely immune to single transistor latch when compared to the conventional SOI MOSFET thus improving the reliability of these structures in VLSI applications